Method for forming an epitaxial structure onto a substrate and substrate processing apparatus
AssigneeASM IP Holding B.V.
InventorsBrendan Marozas, Rami Khazaka, René Henricus Jozef Vervuurt
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Abstract
This disclosure relates to a method for forming an epitaxial structure onto a substrate, a substrate processing apparatus, a computer program, and a non-transitory computer-readable medium. The method comprises providing the substrate in a process chamber and forming an epitaxial layer onto the substrate by exposing the substrate in the process chamber to at least one precursor in the presence of active species.
Claims33
A method for forming an epitaxial structure onto a substrate, the method comprising:
- providing the substrate in a process chamber;
- and
- forming an epitaxial layer onto the substrate by exposing the substrate in the process chamber to at least one precursor in the presence of active species,
- wherein the forming an epitaxial layer comprises maintaining a plasma at a plasma power per exposed substrate area less than or equal to 0.2 W/cm2 to generate the active species.
A substrate processing apparatus, comprising:
- a process chamber configured to hold a substrate,
- a precursor source for providing at least one precursor in the process chamber, and
- a plasma source for providing active species in the process chamber, wherein the substrate processing apparatus comprises a control unit operably coupled to at least the process chamber, the precursor source, and the plasma source, the control unit configured to cause the substrate processing apparatus to perform a method comprising:
- providing the substrate in the process chamber;
- and
- forming an epitaxial layer onto the substrate by exposing the substrate in the process chamber to the at least one precursor in the presence of active species,
- wherein the forming an epitaxial layer comprises maintaining a plasma at a plasma power per exposed substrate area less than or equal to 0.2 W/cm2 to generate the active species.
A non-transitory computer-readable medium storing a computer program that, when executed by a computer, performs a method for forming an epitaxial structure onto a substrate, the method comprising:
- providing the substrate in a process chamber;
- and
- forming an epitaxial layer onto the substrate by exposing the substrate in the process chamber to at least one precursor in the presence of active species,
- wherein the forming an epitaxial layer comprises maintaining a plasma at a plasma power per exposed substrate area less than or equal to 0.2 W/cm2 to generate the active species.
Dependencies are inferred from the claim text.