Manufacturing method for semiconductor device using epitaxy process and apparatus for the same

A method of heating a flat substrate with a VCSEL devise and forming a multilayer thin film in which a first thin film and a second thin film are alternately deposited on a top of the flat substrate through an epitaxy process, the manufacturing method for the semiconductor device comprising:

• a first thin film deposition step of supplying a first source gas at a first deposition temperature to deposit the first thin film to the top surface of the flat substrate;
• a deposition temperature-lowering step of lowering a temperature of the flat substrate from the first deposition temperature to a second deposition temperature;
• a second thin film deposition step of supplying a second source gas at the second deposition temperature to deposit the second thin film to a top surface of the first thin film;
• and
• a deposition temperature-rising step of rising the temperature of the flat substrate from the second deposition temperature to the first deposition temperature.