C30B 29/406
Gallium nitride
Official title: {Gallium nitride}
C30B29/406 (Gallium nitride) appears on 1,426 US grants and 1,853 published applications in this corpus.
Search patents in C30B- Granted patents
- 1,426
- Published applications
- 1,853
- Assignees
- 495
- Inventors
- 2,255
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 17 | 0 |
| 2001 | 27 | 15 |
| 2002 | 39 | 80 |
| 2003 | 63 | 68 |
| 2004 | 36 | 62 |
| 2005 | 42 | 58 |
| 2006 | 40 | 72 |
| 2007 | 40 | 73 |
| 2008 | 58 | 93 |
| 2009 | 44 | 87 |
| 2010 | 73 | 98 |
| 2011 | 44 | 82 |
| 2012 | 64 | 86 |
| 2013 | 77 | 81 |
| 2014 | 73 | 73 |
| 2015 | 66 | 77 |
| 2016 | 54 | 84 |
| 2017 | 56 | 83 |
| 2018 | 84 | 86 |
| 2019 | 69 | 69 |
| 2020 | 60 | 70 |
| 2021 | 52 | 59 |
| 2022 | 40 | 68 |
| 2023 | 44 | 68 |
| 2024 | 53 | 66 |
| 2025 | 41 | 57 |
| 2026 | 39 | 38 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Growth method and structure of LED epitaxy1 Sep 2026US 12,727,286 B2Focus Lightings Tech (Suqian) Co., Ltd.
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Gallium nitride crystal substrate8 Oct 2026US 2026/0308806 A1Sumitomo Chemical Company, Limited
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal1 Oct 2026US 2026/0297809 A1Mitsubishi Chemical Corporation
- Methods for synthesizing iii-v nanocrystals3 Sep 2026US 2026/0258577 A1The University of Chicago
- Spontaneous and stimulated emission devices based on relaxed iii-nitride materials3 Sep 2026US 2026/0261098 A1Opnovix Corp.
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Vapor growth apparatus and vapor growth method capable of growing good productivity560US 5,730,802 ASharp Kabushiki Kaisha · 1998
- Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates497US 6,177,688 B1North Carolina State University · 2001
- Methods for depositing thin films comprising gallium nitride by atomic layer deposition472US 8,846,502 B2ASM IP Holding B. V. · 2014