C30B 29/40
Aiiibv compounds wherein a is b, al, ga, in or tl and
Official title: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B29/40 (Aiiibv compounds wherein a is b, al, ga, in or tl and) appears on 3,094 US grants and 3,578 published applications in this corpus.
Search patents in C30B- Granted patents
- 3,094
- Published applications
- 3,578
- Assignees
- 945
- Inventors
- 4,883
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 9 | 0 |
| 1978 | 4 | 0 |
| 1979 | 7 | 0 |
| 1980 | 9 | 0 |
| 1981 | 10 | 0 |
| 1982 | 5 | 0 |
| 1983 | 10 | 0 |
| 1984 | 13 | 0 |
| 1985 | 12 | 0 |
| 1986 | 15 | 0 |
| 1987 | 16 | 0 |
| 1988 | 11 | 0 |
| 1989 | 31 | 0 |
| 1990 | 23 | 0 |
| 1991 | 26 | 0 |
| 1992 | 27 | 0 |
| 1993 | 32 | 0 |
| 1994 | 23 | 0 |
| 1995 | 34 | 0 |
| 1996 | 24 | 0 |
| 1997 | 35 | 0 |
| 1998 | 29 | 0 |
| 1999 | 28 | 0 |
| 2000 | 36 | 0 |
| 2001 | 52 | 27 |
| 2002 | 53 | 107 |
| 2003 | 82 | 110 |
| 2004 | 72 | 101 |
| 2005 | 68 | 139 |
| 2006 | 77 | 142 |
| 2007 | 74 | 158 |
| 2008 | 90 | 173 |
| 2009 | 82 | 175 |
| 2010 | 130 | 215 |
| 2011 | 95 | 196 |
| 2012 | 144 | 195 |
| 2013 | 158 | 190 |
| 2014 | 175 | 150 |
| 2015 | 135 | 145 |
| 2016 | 118 | 147 |
| 2017 | 117 | 156 |
| 2018 | 137 | 134 |
| 2019 | 125 | 119 |
| 2020 | 105 | 128 |
| 2021 | 91 | 119 |
| 2022 | 87 | 128 |
| 2023 | 90 | 141 |
| 2024 | 98 | 123 |
| 2025 | 88 | 88 |
| 2026 | 74 | 72 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal22 Sep 2026US 12,742,259 B2Sumitomo Electric Industries, Ltd.
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Gallium nitride material and gallium nitride material manufacturing method8 Oct 2026US 2026/0308805 A1Sumitomo Chemical Company, Limited
- Gallium nitride crystal substrate8 Oct 2026US 2026/0308806 A1Sumitomo Chemical Company, Limited
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal1 Oct 2026US 2026/0297809 A1Mitsubishi Chemical Corporation
- Epitaxial growth substrate, method of producing epitaxial growth substrate, and semiconductor element10 Sep 2026US 2026/0265953 A1Dowa Electronics Materials Co., Ltd.
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Vapor growth apparatus and vapor growth method capable of growing good productivity560US 5,730,802 ASharp Kabushiki Kaisha · 1998
- GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon543US 7,589,003 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Substrate holder for MOCVD536US 5,782,979 AMitsubishi Denki Kabushiki Kaisha · 1998