C30B 29/44
Gallium phosphide
C30B29/44 (Gallium phosphide) appears on 62 US grants and 41 published applications in this corpus.
Search patents in C30B- Granted patents
- 62
- Published applications
- 41
- Assignees
- 33
- Inventors
- 107
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 4 |
| 2011 | 2 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 1 | 3 |
| 2015 | 3 | 1 |
| 2016 | 2 | 2 |
| 2017 | 2 | 1 |
| 2018 | 0 | 0 |
| 2019 | 3 | 2 |
| 2020 | 1 | 3 |
| 2021 | 0 | 0 |
| 2022 | 5 | 3 |
| 2023 | 7 | 13 |
| 2024 | 4 | 5 |
| 2025 | 3 | 0 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of producing large GaAs and GaP infrared windows9 Jun 2026US 12,650,538 B2BAE Systems Information and Electronic Systems Integration Inc.
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion14 Apr 2026US 12,601,086 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Semiconductor phosphide injection synthesis system and control method12 Aug 2025US 12,383,879 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Method of producing large GaAs and GaP infrared windows21 Jan 2025US 12,203,191 B2BAE Systems Information and Electronic Systems Integration Inc.
- Method of optimizing the EMI shielding and infrared transparency of GaAs IR windows21 Jan 2025US 12,203,192 B2BAE Systems Information and Electronic Systems Integration Inc.
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion24 Oct 2024US 2024/0352624 A1The 13th Research Institute of China Electronics Technology Group Corporation
- Method of producing large gaas and gap infrared windows6 Jun 2024US 2024/0183065 A1BAE Systems Information and Electronic Systems Integration Inc.
- Method of optimizing the emi shielding and infrared transparency of gaas ir windows6 Jun 2024US 2024/0183066 A1BAE Systems Information and Electronic Systems Integration Inc.
- Method of producing large emi shielded gaas and gap infrared windows6 Jun 2024US 2024/0183075 A1BAE Systems Information and Electronic Systems Integration Inc.
- Method of producing large gaas and gap infrared windows6 Jun 2024US 2024/0184015 A1BAE Systems Information and Electronic Systems Integration Inc.
Most cited
By later US patents
- Method of synthesizing III-V semiconductor nanocrystals49US 5,474,591 ADuke University · 1995
- Controlled growth of semiconductor crystals16US 5,131,975 AThe Regents of the University of California · 1992
- Method of producing defectless epitaxial layer of gallium15US 3,984,263 AMatsushita Electric Industrial Co., Ltd. · 1976
- Method of manufacturing gallium phosphide single crystals with low defect density14US 4,303,464 ASumitomo Electric Industries, Ltd. · 1981
- Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substrates13US 9,647,156 B1The United States of America as represented by the Secretary of the Air Force · 2017