Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substrates

A layered orientation patterned material comprising:

• an orientation patterned gallium arsenide template comprising a patterned layer of gallium arsenide having alternating features of inverted crystallographic polarity of gallium arsenide, the patterned layer comprising:
• a first feature comprising a first crystallographic polarity form of gallium arsenide having a first dimension, and
• a second feature comprising a second crystallographic polarity form of gallium arsenide having a second dimension, wherein a sum of the first and second dimensions defines a period of the patterned layer of gallium arsenide;
• a layer of gallium phosphide on the patterned layer of gallium arsenide, wherein the layer of gallium phosphide comprises alternating regions of inverted crystallographic polarity of gallium phosphide, wherein dimensions of the alternating regions generally correspond to the first and second dimensions of the underlying first and second features of the patterned layer of gallium arsenide, and wherein each of the alternating regions of inverted crystallographic polarity of gallium phosphide are present at about 100 micron thickness or more.