C30B 29/42
Gallium arsenide
C30B29/42 (Gallium arsenide) appears on 322 US grants and 252 published applications in this corpus.
Search patents in C30B- Granted patents
- 322
- Published applications
- 252
- Assignees
- 168
- Inventors
- 633
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 1 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 10 | 0 |
| 1990 | 8 | 0 |
| 1991 | 10 | 0 |
| 1992 | 8 | 0 |
| 1993 | 14 | 0 |
| 1994 | 7 | 0 |
| 1995 | 11 | 0 |
| 1996 | 7 | 0 |
| 1997 | 7 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 3 | 0 |
| 2001 | 14 | 9 |
| 2002 | 7 | 4 |
| 2003 | 9 | 8 |
| 2004 | 6 | 6 |
| 2005 | 5 | 6 |
| 2006 | 3 | 13 |
| 2007 | 7 | 3 |
| 2008 | 6 | 10 |
| 2009 | 5 | 9 |
| 2010 | 2 | 15 |
| 2011 | 4 | 9 |
| 2012 | 5 | 7 |
| 2013 | 4 | 9 |
| 2014 | 7 | 12 |
| 2015 | 10 | 9 |
| 2016 | 7 | 9 |
| 2017 | 9 | 9 |
| 2018 | 5 | 8 |
| 2019 | 9 | 10 |
| 2020 | 4 | 13 |
| 2021 | 11 | 21 |
| 2022 | 15 | 9 |
| 2023 | 17 | 18 |
| 2024 | 11 | 14 |
| 2025 | 11 | 5 |
| 2026 | 3 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal22 Sep 2026US 12,742,259 B2Sumitomo Electric Industries, Ltd.
- Method of producing large GaAs and GaP infrared windows9 Jun 2026US 12,650,538 B2BAE Systems Information and Electronic Systems Integration Inc.
- Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor24 Feb 2026US 12,559,856 B2Shanxi China Crystal Technologies Co., Ltd.
- GaAs wafer and method of producing GaAs ingot11 Nov 2025US 12,467,160 B2Dowa Electronics Materials Co., Ltd.
- Vapor phase epitaxy method14 Oct 2025US 12,444,604 B2
- Method of producing gallium arsenide single crystal, method of producing gallium arsenide single crystal substrate, gallium arsenide single crystal substrate, and gallium arsenide single crystal20 Aug 2026US 2026/0242980 A1Sumitomo Electric Industries, Ltd.
- Gallium arsenide single crystal substrate and method of producing same30 Jul 2026US 2026/0218416 A1Sumitomo Electric Industries, Ltd.
- Gaas wafer group30 Jul 2026US 2026/0223645 A1Dowa Electronics Materials Co., Ltd.
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal9 Jul 2026US 2026/0193811 A1Sumitomo Electric Industries, Ltd.
- Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant28 May 2026US 2026/0146367 A1AXT, Inc.
Most cited
By later US patents
- Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same310US 5,334,277 ANichia Kagaky Kogyo K.K. · 1994
- Lift-off and subsequent bonding of epitaxial films217US 4,883,561 ABell Communications Research, Inc. · 1989
- Growth of doped semiconductor monolayers180US 5,693,139 AOki Electric Co., Ltd. · 1997
- Atomic layer epitaxy method and apparatus165US 5,483,919 ANippon Telegraph and Telephone Corporation · 1996
- Method for lifting-off epitaxial films158US 4,846,931 ABell Communications Research, Inc. · 1989