Vapor phase epitaxy method

A vapor phase epitaxy method comprising:

• growing a Ill-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from a vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V;
• setting, when a first growth height is reached, an initial n-doping level in the epitaxial gas flow via a ratio, leading to a p-doping, of a first mass flow of the first precursor to a second mass flow of the second precursor and with an addition of a third mass flow of a third precursor for an n-type dopant to the epitaxial gas flow;
• and
• changing the third mass flow and/or the ratio between the first and second mass flow stepwise or continuously over a junction region layer with a growth height of at least 10 μm until a target p-doping level is reached.