Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
AssigneeNichia Kagaky Kogyo K.K.
InventorShuji Nakamura
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Abstract
A method of growing in vapor phase a semiconductor crystal layer supplies a reaction gas to a portion above the surface of a heated substrate so as to be parallel or obliquely to the substrate, and uses a transparent blow tube widened toward its blow port like a funnel to blow a pressing gas, which is inert with respect to the reaction gas, toward the substrate, thereby bringing the reaction gas into contact with the surface of the substrate.
Claims17
A method of vapor-growing a gallium nitride group semiconductor crystal layer using a metal organic chemical vapor deposition method, comprising the steps of:
- heating the substrate;
- supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate;
- blowing a pressing gas by using a blow tube widened toward a blow port, substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate;
- each of said step being performed under atmospheric pressure.
A method of vapor-growing a gallium nitride group compound semiconductor crystal layer using metal organic chemical vapor deposition method, comprising the steps of:
- heating the substrate;
- supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate;
- blowing a pressing gas substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate;
- each of said step being performed under atmospheric pressure.
Dependencies are inferred from the claim text.