Method of producing gallium arsenide single crystal, method of producing gallium arsenide single crystal substrate, gallium arsenide single crystal substrate, and gallium arsenide single crystal

A gallium arsenide single crystal substrate having a main surface having a circular shape, wherein

• a diameter of the gallium arsenide single crystal substrate is 200 mm or more and 210 mm or less,
• the main surface is a plane having an off angle of 4° or more and 20° or less with respect to a (100) plane of the gallium arsenide single crystal,
• an off direction of the plane having the off angle is any one of a [01-1] direction, a [0-1-1] direction, a [0-11] direction, or a [011] direction,
• an average value of a dislocation density of the main surface is 0 cm−2 or more and 3.77 cm−2 or less,
• in an imaginary grid formed by laying out squares each having each side of 2 mm on the main surface such that a largest number of the squares are arranged side by side without overlapping with each other, a ratio of the number of squares in each of which no dislocation is present to a total number of the squares constituting the grid is 98.04% or more,
• the gallium arsenide single crystal substrate includes silicon,
• a concentration of the silicon is 1.0×1018 cm−3 or more and 5.0×1019 cm−3 or less, and
• a carrier concentration of the gallium arsenide single crystal substrate is 0.8×1018 cm−3 or more and 4.0×1018 cm−3 or less.

A gallium arsenide single crystal having a columnar shape, wherein

• a diameter of a circular surface that forms a surface of the gallium arsenide single crystal is 200 mm or more and 210 mm or less,
• the circular surface is a plane having an off angle of 4° or more and 20° or less with respect to a (100) plane of the gallium arsenide single crystal,
• an off direction of the plane having the off angle is any one of a [01-1] direction, a [0-1-1] direction, a [0-11] direction, or a [011] direction,
• an average value of a dislocation density in the circular surface is 0 cm−2 or more and 3.77 cm−2 or less,
• in an imaginary grid formed by laying out squares each having each side of 2 mm on the circular surface such that a largest number of the squares are arranged side by side without overlapping with each other, a ratio of the number of squares in each of which no dislocation is present to a total number of the squares constituting the grid is 98.04% or more,
• the gallium arsenide single crystal includes silicon,
• a concentration of the silicon is 1.0×1018 cm−3 or more and 5.0×1019 cm−3 or less, and
• a carrier concentration of the gallium arsenide single crystal is 0.8×1018 cm−3 or more and 4.0×1018 cm−3 or less.