GaAs wafer and method of producing GaAs ingot
AssigneeDowa Electronics Materials Co., Ltd.
InventorsNaoya Sunachi, Ryuichi Toba, Akira Akaishi
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Abstract
Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500/cm2 or less.
Claims10
An n-type GaAs wafer comprising:
- silicon with a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3;
- indium with an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3;
- boron with a boron concentration of 1.0×1018 cm−3 or more;
- and
- zinc with a zinc concentration of 3×1016 cm−3 or less,
- wherein an average dislocation density of the n-type GaAs wafer is 1500/cm2 or less.
A method of producing an n-type GaAs ingot, the method comprising performing a vertical gradient freeze method or a vertical Bridgman method using silicon as a dopant and using boron oxide as a sealant,
- wherein indium is used together with the silicon as the dopant, and zinc is not used as the dopant,
- an amount of silicon charged is 70 wt ppm or more and 130 wt ppm or less with respect to a GaAs feedstock, and an amount of indium charged is 100 wt ppm or more and 5000 wt ppm or less with respect to the GaAs feedstock, and
- an average dislocation density of the n-type GaAs ingot is 1500/cm2 or less.
Dependencies are inferred from the claim text.