C30B 29/36
Carbides
C30B29/36 (Carbides) appears on 1,346 US grants and 1,757 published applications in this corpus.
Search patents in C30B- Granted patents
- 1,346
- Published applications
- 1,757
- Assignees
- 421
- Inventors
- 2,152
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 7 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 11 | 0 |
| 1990 | 15 | 0 |
| 1991 | 6 | 0 |
| 1992 | 11 | 0 |
| 1993 | 10 | 0 |
| 1994 | 6 | 0 |
| 1995 | 14 | 0 |
| 1996 | 5 | 0 |
| 1997 | 10 | 0 |
| 1998 | 19 | 0 |
| 1999 | 23 | 0 |
| 2000 | 22 | 0 |
| 2001 | 19 | 11 |
| 2002 | 22 | 40 |
| 2003 | 27 | 17 |
| 2004 | 27 | 24 |
| 2005 | 18 | 37 |
| 2006 | 19 | 38 |
| 2007 | 11 | 31 |
| 2008 | 32 | 34 |
| 2009 | 26 | 40 |
| 2010 | 21 | 47 |
| 2011 | 21 | 67 |
| 2012 | 26 | 83 |
| 2013 | 41 | 63 |
| 2014 | 37 | 75 |
| 2015 | 60 | 82 |
| 2016 | 50 | 88 |
| 2017 | 72 | 63 |
| 2018 | 70 | 75 |
| 2019 | 71 | 80 |
| 2020 | 74 | 102 |
| 2021 | 64 | 90 |
| 2022 | 70 | 99 |
| 2023 | 61 | 98 |
| 2024 | 86 | 133 |
| 2025 | 78 | 124 |
| 2026 | 59 | 116 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal6 Oct 2026US 12,753,528 B2Denso Corporation
- Nanowires network15 Sep 2026US 12,735,801 B2FundacióN Imdea Materiales
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same15 Sep 2026US 12,740,118 B2STMicroelectronics International N. V.
- System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same1 Sep 2026US 12,723,327 B2SiCrystal GmbH
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Sic wafer and sic epitaxial wafer8 Oct 2026US 2026/0313999 A1Resonac Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Systems and Methods for Modifying Crystal Growth Processes Based on Sensor Data1 Oct 2026US 2026/0297800 A1Wolfspeed, Inc.
- Modifying Crystal Growth Processes Based on Predicted In Situ Parameters1 Oct 2026US 2026/0297801 A1Wolfspeed, Inc.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Carbide nanomaterials684US 6,190,634 B1President and Fellows of Harvard College · 2001
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998