C30B 28/00
Production of homogeneous polycrystalline material with defined structure
C30B28/00 (Production of homogeneous polycrystalline material with defined structure) appears on 208 US grants and 344 published applications in this corpus.
Search patents in C30B- Granted patents
- 208
- Published applications
- 344
- Assignees
- 190
- Inventors
- 742
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 1 | 5 |
| 2006 | 2 | 2 |
| 2007 | 2 | 9 |
| 2008 | 1 | 7 |
| 2009 | 1 | 18 |
| 2010 | 6 | 19 |
| 2011 | 7 | 29 |
| 2012 | 12 | 20 |
| 2013 | 17 | 35 |
| 2014 | 13 | 15 |
| 2015 | 17 | 15 |
| 2016 | 16 | 13 |
| 2017 | 16 | 20 |
| 2018 | 19 | 14 |
| 2019 | 16 | 6 |
| 2020 | 7 | 10 |
| 2021 | 10 | 12 |
| 2022 | 3 | 13 |
| 2023 | 12 | 12 |
| 2024 | 10 | 17 |
| 2025 | 7 | 36 |
| 2026 | 11 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same15 Sep 2026US 12,740,118 B2STMicroelectronics International N. V.
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC11 Aug 2026US 12,703,929 B2Soitec
- Laser crystallization apparatus4 Aug 2026US 12,697,687 B2Samsung Display Co., Ltd.
- Refractory carbide layer28 Jul 2026US 12,692,594 B2Sgl Carbon SE
- Method for manufacturing a plurality of polycrystalline silicon carbide substrates1 Oct 2026US 2026/0297806 A1
- Reaction furnace for producing polycrystalline silicon rod, gas supply nozzle, production method of polycrystalline silicon rod, and polycrystalline silicon rod1 Oct 2026US 2026/0297807 A1Tokuyama Corporation
- Refractory carbide layer17 Sep 2026US 2026/0275507 A1Sgl Carbon SE
- Devices and methods involving low-temperature-grown diamond in electronic devices27 Aug 2026US 2026/0250881 A1The Board of Trustees of the Leland Stanford Junior University
- Doped polycrystalline sic wafer with improved flatness and electrical conductivity, and method for producing such a wafer20 Aug 2026US 2026/0242976 A1Mersen France Gennevilliers SAS
Most cited
By later US patents
- Polycrystalline group III metal nitride with getter and method of making54US 8,461,071 B2Soraa, Inc. · 2013
- Single scan irradiation for crystallization of thin films46US 7,311,778 B2The Trustees of Columbia University in the City of New York · 2007
- Method and apparatus for constant composition delivery of hydride gases for semiconductor processing39US 6,080,297 AElectron Transfer Technologies, Inc. · 2000
- Ceramic, piezoelectric device, and production method thereof19US 8,547,001 B2Canon Kabushiki Kaisha · 2013
- Apparatus for producing polycrystalline silicon sheets and production method using the same17US 6,413,313 B1Sharp Kabushiki Kaisha · 2002