C30B 28/12
Directly from the gas state
Official title: directly from the gas state
C30B28/12 (Directly from the gas state) appears on 44 US grants and 89 published applications in this corpus.
Search patents in C30B- Granted patents
- 44
- Published applications
- 89
- Assignees
- 59
- Inventors
- 226
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 1 | 2 |
| 2012 | 1 | 2 |
| 2013 | 2 | 6 |
| 2014 | 0 | 1 |
| 2015 | 2 | 4 |
| 2016 | 3 | 2 |
| 2017 | 1 | 4 |
| 2018 | 4 | 2 |
| 2019 | 5 | 2 |
| 2020 | 2 | 5 |
| 2021 | 3 | 3 |
| 2022 | 1 | 4 |
| 2023 | 2 | 5 |
| 2024 | 4 | 10 |
| 2025 | 3 | 23 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC11 Aug 2026US 12,703,929 B2Soitec
- Refractory carbide layer28 Jul 2026US 12,692,594 B2Sgl Carbon SE
- Polycrystalline SIC article21 Jul 2026US 12,686,944 B2Tokai Carbon Co., Ltd.
- Piezoelectric film, piezoelectric stack, piezoelectric element, and method for producing piezoelectric stack23 Jun 2026US 12,666,875 B2Sumitomo Chemical Company, Limited
- Method for manufacturing a plurality of polycrystalline silicon carbide substrates1 Oct 2026US 2026/0297806 A1
- Reaction furnace for producing polycrystalline silicon rod, gas supply nozzle, production method of polycrystalline silicon rod, and polycrystalline silicon rod1 Oct 2026US 2026/0297807 A1Tokuyama Corporation
- Refractory carbide layer17 Sep 2026US 2026/0275507 A1Sgl Carbon SE
- Devices and methods involving low-temperature-grown diamond in electronic devices27 Aug 2026US 2026/0250881 A1The Board of Trustees of the Leland Stanford Junior University
- Doped polycrystalline sic wafer with improved flatness and electrical conductivity, and method for producing such a wafer20 Aug 2026US 2026/0242976 A1Mersen France Gennevilliers SAS
Most cited
By later US patents
- Method and apparatus for constant composition delivery of hydride gases for semiconductor processing39US 6,080,297 AElectron Transfer Technologies, Inc. · 2000
- Method for continual preparation of polycrystalline silicon using a fluidized bed reactor7US 8,017,024 B2Korea Research Institute of Chemical Technology · 2011
- Polycrystalline SiC substrate and method for manufacturing same4US 10,934,634 B2Sicoxs Corporation · 2021
- Method for continual preparation of polycrystalline silicon using a fluidized bed reactor3US 8,431,032 B2Korea Research Institute of Chemical Technology · 2013
- Surface-coated cutting tool2US 9,863,064 B2Sumitomo Electric Hardmetal Corp. · 2018