Polycrystalline SiC substrate and method for manufacturing same
AssigneeSicoxs Corporation
InventorsKuniaki Yagi, Motoki Kobayashi
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Abstract
A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.
Claims6
A polycrystalline SiC substrate comprising polycrystalline SiC therethrough and having a first side and a second side,
- wherein a substrate grain size change rate, which is a value obtained by dividing a difference between an average value of crystal grain sizes of the polycrystalline SiC on the first side and an average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less, and
- wherein a radius of curvature of the polycrystalline SiC substrate is 142 m or more.
Dependencies are inferred from the claim text.