C30B 28/02
Directly from the solid state
Official title: directly from the solid state
C30B28/02 (Directly from the solid state) appears on 31 US grants and 48 published applications in this corpus.
Search patents in C30B- Granted patents
- 31
- Published applications
- 48
- Assignees
- 27
- Inventors
- 106
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 1 | 2 |
| 2015 | 0 | 1 |
| 2016 | 1 | 3 |
| 2017 | 3 | 5 |
| 2018 | 4 | 6 |
| 2019 | 3 | 1 |
| 2020 | 1 | 2 |
| 2021 | 4 | 1 |
| 2022 | 0 | 7 |
| 2023 | 4 | 1 |
| 2024 | 3 | 2 |
| 2025 | 2 | 9 |
| 2026 | 2 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same15 Sep 2026US 12,740,118 B2STMicroelectronics International N. V.
- Laser crystallization apparatus4 Aug 2026US 12,697,687 B2Samsung Display Co., Ltd.
- Transparent laminated passivation film structure, and preparation method and application thereof30 Dec 2025US 12,514,026 B2Teranergy Technology Co., Ltd.
- Silicon carbide wafer and method of forming the same11 Nov 2025US 12,466,019 B2GlobalWafers Co., Ltd.
- Method of depositing silicon film and film deposition apparatus3 Sep 2024US 12,080,552 B2Tokyo Electron Limited
- Doped substantially single-phase rare earth oxide-zirconia materials and methods of making the same7 May 2026US 2026/0125822 A1CoorsTek, Inc.
- Polycrystalline materials comprising yttrium aluminum perovskite and methods of making the same19 Mar 2026US 2026/0078526 A1CoorsTek, Inc.
- Substrate processing method, method of manufacturing semiconductor device, recording medium and substrate processing apparatus15 Jan 2026US 2026/0018415 A1Kokusai Electric Corporation
- Display device and method for fabricating the same13 Nov 2025US 2025/0351573 A1Samsung Display Co., Ltd.
- Fabrication of large area radiation detectors and shielding via fieldassisted sintering technology (fast)6 Nov 2025US 2025/0341021 A1The Penn State Research Foundation
Most cited
By later US patents
- Method for manufacturing sputtering target, method for forming oxide film, and transistor7US 9,267,199 B2Semiconductor Energy Laboratory Co.Ltd. · 2016
- Mask for sequential lateral solidification and crystallization method using thereof6US 6,867,151 B2LG. Philips LCD Co., Ltd. · 2005
- Method for manufacturing sputtering target, method for forming oxide film, and transistor5US 10,522,347 B2Semiconductor Energy Laboratory Co.Ltd. · 2019
- Cathode including sintered polycrystalline material, secondary battery including the cathode, and method of manufacturing the cathode3US 10,147,944 B2Samsung Electronics Co., Ltd. · 2018
- Method for manufacturing sputtering target, method for forming oxide film, and transistor2US 11,139,166 B2Semiconductor Energy Laboratory Co.Ltd. · 2021