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US 12,466,019 B2Granted
Silicon carbide wafer and method of forming the same
AssigneeGlobalWafers Co., Ltd.
InventorChing-Shan Lin
Life of this patent
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Abstract
A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm2 at both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm2 at both the seed end and the dome end.
Claims14
A silicon carbide wafer, having a seed end and a dome end opposite to the seed end, wherein
- a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm2 at both the seed end and the dome end, and
- a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm2 at both the seed end and the dome end.
A method of forming a silicon carbide wafer, comprising:
- providing a raw material containing a carbon element and a silicon element and a seed crystal located above the raw material in a reactor;
- performing a growth process of silicon carbide crystal, wherein the growth process comprises heating the reactor and the raw material to form a silicon carbide crystal on the seed crystal,
- in the growth process, controlling an axial temperature gradient (ΔTz) of the silicon carbide crystal in a range of 20° C./cm to 150° C./cm, and controlling a radial temperature gradient (ΔTx) of the silicon carbide crystal in a range of 10° C./cm to 100° C./cm;
- and
- after slicing and polishing the silicon carbide crystal, obtaining a silicon carbide wafer.
2 more elements
Dependencies are inferred from the claim text.