Display device and method for fabricating the same
AssigneeSamsung Display Co., Ltd.
InventorsDong Jin PARK, Sung Hyun KIM
Life of this patent
Estimating the term…
Abstract
A display device and a method of fabricating the display device are provided. The method of fabricating a display device, the method comprises forming a metal layer on a substrate, forming a buffer layer on the metal layer, forming an amorphous silicon layer on the buffer layer, aligning a crystallization device that converts microwaves into magnetic fields above the amorphous silicon layer, scanning the crystallization device above the amorphous silicon layer to generate resistance heat in the metal layer by the magnetic fields, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using the resistance heat of the metal layer.
Claims21
A method of fabricating a display device, the method comprising:
- forming a metal layer on a substrate;
- forming a buffer layer on the metal layer;
- forming an amorphous silicon layer on the buffer layer;
- aligning a crystallization device that converts microwaves into magnetic fields above the amorphous silicon layer;
- scanning the crystallization device above the amorphous silicon layer to generate resistance heat in the metal layer by the magnetic fields;
- and
- crystallizing the amorphous silicon layer into a polycrystalline silicon layer using the resistance heat of the metal layer.
A display device comprising:
- a substrate;
- a metal layer disposed on the substrate;
- a buffer layer disposed on the metal layer;
- a semiconductor layer disposed on the buffer layer and including polycrystalline silicon;
- a gate insulating layer disposed on the semiconductor layer;
- a gate electrode disposed on the gate insulating layer;
- an interlayer dielectric layer disposed on the gate electrode;
- and
- a source electrode and a drain electrode disposed on the interlayer dielectric layer and respectively connected to the semiconductor layer,
- wherein a grain size of the polycrystalline silicon is in a range of about 1 μm to about 10 μm.
An electronic device, comprising:
- a display device that provides an image;
- a processor that provides an image data signal to the display device;
- a memory that stores a data information for operation;
- and
- a power module that generates power,
- wherein the display device comprises:
- a substrate;
- a metal layer disposed on the substrate;
- a buffer layer disposed on the metal layer;
- a semiconductor layer disposed on the buffer layer and including polycrystalline silicon;
- a gate insulating layer disposed on the semiconductor layer;
- a gate electrode disposed on the gate insulating layer;
- an interlayer dielectric layer disposed on the gate electrode;
- and
- a source electrode and a drain electrode disposed on the interlayer dielectric layer and respectively connected to the semiconductor layer,
- a grain size of the polycrystalline silicon is in a range of about 1 μm to about 10 μm.
Dependencies are inferred from the claim text.