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US 12,080,552 B2Granted
Method of depositing silicon film and film deposition apparatus
AssigneeTokyo Electron Limited
InventorsTatsuya Miyahara, Yoshihiro Takezawa, Daisuke Suzuki, Hiroyuki Hayashi
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Abstract
To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.
Claims4
A method of depositing a silicon film, the method comprising:
- supplying a silicon-containing gas on a seed layer;
- depositing an amorphous silicon film on the seed layer, wherein the amorphous silicon film is deposited at a first temperature;
- supplying chlorosilane gas to the amorphous silicon film;
- crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film, wherein the chlorosilane cap layer is formed at a second temperature higher than the first temperature;
- and
- annealing the chlorosilane cap layer and the amorphous silicon film at a third temperature higher than the second temperature.
3 more elements
Dependencies are inferred from the claim text.