C30B 13/00
Single-crystal growth by zone-melting
Official title: Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00)
C30B13/00 (Single-crystal growth by zone-melting) appears on 791 US grants and 528 published applications in this corpus.
Search patents in C30B- Granted patents
- 791
- Published applications
- 528
- Assignees
- 369
- Inventors
- 1,500
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 27 | 0 |
| 1977 | 26 | 0 |
| 1978 | 22 | 0 |
| 1979 | 22 | 0 |
| 1980 | 20 | 0 |
| 1981 | 13 | 0 |
| 1982 | 11 | 0 |
| 1983 | 8 | 0 |
| 1984 | 7 | 0 |
| 1985 | 18 | 0 |
| 1986 | 24 | 0 |
| 1987 | 17 | 0 |
| 1988 | 17 | 0 |
| 1989 | 13 | 0 |
| 1990 | 14 | 0 |
| 1991 | 19 | 0 |
| 1992 | 11 | 0 |
| 1993 | 8 | 0 |
| 1994 | 16 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 7 | 0 |
| 1998 | 14 | 0 |
| 1999 | 8 | 0 |
| 2000 | 13 | 0 |
| 2001 | 9 | 8 |
| 2002 | 13 | 14 |
| 2003 | 14 | 30 |
| 2004 | 10 | 36 |
| 2005 | 18 | 46 |
| 2006 | 27 | 30 |
| 2007 | 21 | 24 |
| 2008 | 27 | 19 |
| 2009 | 15 | 26 |
| 2010 | 20 | 21 |
| 2011 | 13 | 22 |
| 2012 | 18 | 18 |
| 2013 | 15 | 24 |
| 2014 | 26 | 26 |
| 2015 | 18 | 20 |
| 2016 | 22 | 29 |
| 2017 | 16 | 31 |
| 2018 | 17 | 11 |
| 2019 | 14 | 19 |
| 2020 | 21 | 13 |
| 2021 | 17 | 15 |
| 2022 | 13 | 16 |
| 2023 | 12 | 9 |
| 2024 | 9 | 10 |
| 2025 | 7 | 5 |
| 2026 | 2 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C30B 13/16Heating of the molten zone360
- C30B 13/28Controlling or regulating115
- C30B 13/08Adding crystallising materials or reactants forming it in situ to the molten63
- C30B 13/02Zone-melting with a solvent56
- C30B 13/32Mechanisms for moving either the charge or the heater41
- C30B 13/06The molten zone not extending over the whole cross-section39
- C30B 13/34Single-crystal growth by zone-melting: characterised by the seed37
- C30B 13/14Crucibles or vessels27
Recent patents
- Device and method for producing a monocrystalline silicon rod in a zone-melting pulling system22 Sep 2026US 12,742,253 B2Siltronic AG
- Silicon single crystal substrate for vapor phase growth, vapor phase growth substrate and methods for producing them21 Apr 2026US 12,606,935 B2Shin-Etsu Handotai Co., Ltd.
- Lithium composite oxide single crystal, lithium composite oxide polycrystal, lithium composite oxide material, solid electrolyte material, all- solid-state lithium-ion secondary battery, and method for producing solid electrolyte material11 Nov 2025US 12,467,158 B2National Institute of Advanced Industrial Science and Technology
- Multilayer organic solid thin films having a biaxial refractive index14 Oct 2025US 12,442,964 B2Meta Platforms Technologies, LLC
- Cathode member for electron beam generation, and method for manufacturing the same7 Oct 2025US 12,437,953 B2Kobelco Research Institute, Inc.
- Production device and production method20 Aug 2026US 2026/0242975 A1A. C. Company
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
- Apparatus for producing oxide single crystal, method for producing gallium oxide single crystals using the apparatus, and gallium oxide single crystal produced thereby21 May 2026US 2026/0139408 A1Pusan National Univeristy Industry-University Cooperation Foundation
- Transition metal element-doped garnet-type aluminate scintillation material with high-quality factor and preparation method and application thereof30 Apr 2026US 2026/0117122 A1Shanghai Institute of Ceramics, Chinese Academy of Sciences
- Securing crystal feedstock for deployment in zero gravity growth furnaces to manufacturing satellites23 Apr 2026US 2026/0110107 A1
Most cited
By later US patents
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007
- Heat treatment machine for semiconductors401US 4,581,520 A1986
- Long persistent phosphors and persistent energy transfer technique225US 6,953,536 B2University of Georgia Research Foundation, Inc. · 2005
- Crystallization processing of semiconductor film regions on a substrate, and devices made therewith163US 6,322,625 B2The Trustees of Columbia University in the City of New York · 2001
- Method for producing semiconductor film162US 5,310,446 ARicoh Company, Ltd. · 1994