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US 12,606,935 B2Granted
Silicon single crystal substrate for vapor phase growth, vapor phase growth substrate and methods for producing them
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKeitaro Tsuchiya, Masaru Shinomiya, Weifeng Qu
Life of this patent
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Abstract
A silicon single crystal substrate for vapor phase growth, having the silicon single crystal substrate being made of an FZ crystal having a resistivity of 1000 Ωcm or more, wherein the surface of the silicon single crystal substrate is provided with a high nitrogen concentration layer having a nitrogen concentration higher than that of other regions and a nitrogen concentration of 5×1015 atoms/cm3 or more and a thickness of 10 to 100 μm.
Claims6
A silicon single crystal substrate for vapor phase growth,
- comprising the silicon single crystal substrate being made of an FZ crystal having a resistivity of 1000 Ωcm or more,
- wherein the surface of the silicon single crystal substrate is provided with a high nitrogen concentration layer having a nitrogen concentration higher than that of the bulk or back surface of the substrate and a nitrogen concentration of 5×1015 atoms/cm3 or more and a thickness of 10 to 100 μm, wherein the high nitrogen concentration layer is adjacent to the bulk.
A method for producing a silicon single crystal substrate for vapor phase growth,
- wherein a silicon single crystal ingot having a resistivity of 1000 Ωcm or more is manufactured by the FZ method, the ingot is sliced into wafers to form a silicon single crystal substrate, and the silicon single crystal substrate having a resistivity of 1000 Ωcm or more manufactured by the FZ method is subjected to RTA treatment in a nitrogen-containing gas atmosphere, to form a high nitrogen concentration layer having a nitrogen concentration higher than that of the bulk or back surface of the substrate and a nitrogen concentration of 5×1015 atoms/cm3 or more and a thickness of 10 to 100 μm at the surface of the silicon single crystal substrate, wherein the high nitrogen concentration layer is adjacent to the bulk.
Dependencies are inferred from the claim text.