C30B 13/08
Adding crystallising materials or reactants forming it in situ to the molten
Official title: adding crystallising materials or reactants forming it in situ to the molten zone
C30B13/08 (Adding crystallising materials or reactants forming it in situ to the molten) appears on 63 US grants and 59 published applications in this corpus.
Search patents in C30B- Granted patents
- 63
- Published applications
- 59
- Assignees
- 44
- Inventors
- 140
- Latest grant
- 10 Dec 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 2 |
| 2002 | 2 | 0 |
| 2003 | 0 | 3 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 4 |
| 2010 | 1 | 3 |
| 2011 | 1 | 1 |
| 2012 | 2 | 1 |
| 2013 | 3 | 2 |
| 2014 | 2 | 5 |
| 2015 | 2 | 6 |
| 2016 | 2 | 3 |
| 2017 | 2 | 11 |
| 2018 | 3 | 1 |
| 2019 | 5 | 6 |
| 2020 | 8 | 1 |
| 2021 | 0 | 3 |
| 2022 | 1 | 1 |
| 2023 | 2 | 1 |
| 2024 | 1 | 0 |
| 2025 | 0 | 2 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Single crystal manufacturing apparatus and method10 Dec 2024US 12,163,246 B2Novel Crystal Technology, Inc.
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- Single crystal manufacturing apparatus and method15 Aug 2023US 11,725,299 B2Novel Crystal Technology, Inc.
- Single-crystal production equipment and single-crystal production method10 May 2022US 11,326,270 B2Crystal Systems, Inc.
- Method, use and apparatus for producing a single-crystalline work piece29 Dec 2020US 10,875,124 B2SLM Solutions Group AG
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
- Inorganic structure and method for manufacturing inorganic structure26 Mar 2026US 2026/0085448 A1Osaka University
- Transparent horizontal gradient freeze apparatus with regulated growth rate11 Sep 2025US 2025/0283245 A1BAE Systems Information and Electronic Systems Integration Inc.
- Method for manufacturing sapphire bars15 May 2025US 2025/0154679 A1Comadur SA
- Single crystal manufacturing apparatus and method19 Oct 2023US 2023/0332324 A1Novel Crystal Technology, Inc.
Most cited
By later US patents
- Temperature gradient zone melting utilizing infrared radiation34US 4,001,047 AGeneral Electric Company · 1977
- Heating apparatus for temperature gradient zone melting33US 4,041,278 AGeneral Electric Company · 1977
- Deep power diode25US 4,011,582 AGeneral Electric Company · 1977
- Deep-eutectic melt growth of nitride crystals18US 8,088,220 B2Crystal IS, Inc. · 2012
- Semiconductor devices by laser enhanced diffusion17US 4,343,832 AMotorola, Inc. · 1982