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US 8,088,220 B2Granted
Deep-eutectic melt growth of nitride crystals
AssigneeCrystal IS, Inc.
InventorsGlen A. Slack, Sandra B. Schujman
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Abstract
In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.
Claims23
A method of forming a crystalline structure, the method comprising:
- providing, at a growth temperature, a liquid (i) consisting essentially of a mixture of AlN and a non-AlN nitride compound, and (ii) having a quality factor greater than approximately 0.14;
- and
- forming solid AlN from the liquid, the solid AlN having an oxygen concentration less than 100 parts per million by weight,
- wherein (i) the quality factor is defined as Q=ΔT(K)/Tlm(K), Q being the quality factor, Tlm being the lower of the melting points of AlN and the non-AlN nitride compound in degrees Kelvin, and ΔT being the difference between Tlm and the minimum liquidus temperature of the pseudo-binary system formed by AlN and the non-AlN nitride compound, and (ii) the growth temperature is lower than a melting point of AlN.
1 more element
Dependencies are inferred from the claim text.