C30B 13/10
With addition of doping materials
Official title: with addition of doping materials
C30B13/10 (With addition of doping materials) appears on 45 US grants and 41 published applications in this corpus.
Search patents in C30B- Granted patents
- 45
- Published applications
- 41
- Assignees
- 35
- Inventors
- 102
- Latest grant
- 17 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 3 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 4 |
| 2010 | 1 | 2 |
| 2011 | 1 | 1 |
| 2012 | 2 | 1 |
| 2013 | 1 | 1 |
| 2014 | 2 | 5 |
| 2015 | 2 | 4 |
| 2016 | 2 | 2 |
| 2017 | 0 | 9 |
| 2018 | 2 | 1 |
| 2019 | 5 | 2 |
| 2020 | 4 | 0 |
| 2021 | 0 | 2 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- GA2O3-based single crystal substrate, and production method therefor28 Apr 2020US 10,633,761 B2Tamura Corporation
- Synthesis and processing of novel phase of carbon (Q-carbon)10 Mar 2020US 10,586,702 B2North Carolina State University
- Synthesis and processing of Q-carbon, graphene, and diamond18 Feb 2020US 10,566,193 B2North Carolina State University
- Synthesis and processing of novel phase of boron nitride (Q-BN)7 Jan 2020US 10,529,564 B2North Carolina State University
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
- Transparent horizontal gradient freeze apparatus with regulated growth rate11 Sep 2025US 2025/0283245 A1BAE Systems Information and Electronic Systems Integration Inc.
- Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer22 Jul 2021US 2021/0222319 A1Siltronic AG
- Method of Producing a Single-Crystal22 Jul 2021US 2021/0222320 A1Crystal Systems, Inc.
- Ga2o3-based single crystal substrate, and production method therefor28 Feb 2019US 2019/0062942 A1Tamura Corporation
Most cited
By later US patents
- Temperature gradient zone melting utilizing infrared radiation34US 4,001,047 AGeneral Electric Company · 1977
- Heating apparatus for temperature gradient zone melting33US 4,041,278 AGeneral Electric Company · 1977
- Deep power diode25US 4,011,582 AGeneral Electric Company · 1977
- Deep-eutectic melt growth of nitride crystals18US 8,088,220 B2Crystal IS, Inc. · 2012
- Semiconductor devices by laser enhanced diffusion17US 4,343,832 AMotorola, Inc. · 1982