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US 4,001,047 AGranted
Temperature gradient zone melting utilizing infrared radiation
AssigneeGeneral Electric Company
InventorJohn K. Boah
Life of this patent
Estimating the term…
Abstract
Disclosed is a method for selectively doping semiconductor materials utilizing temperature gradient zone melting. The required temperature gradient is provided by infrared radiation impinging on and heating one surface of a body of semiconductor material to be doped. The heat is conducted through the body creating a temperature gradient.
Claims16
A method of forming a region of a selected conductivity type in a body of semiconductor material comprising the steps of:
- providing a body of semiconductor material;
- depositing a quantity of a dopant on one surface of said body, said dopant being deposited in a predetermined pattern and being of a selected conductivity type;
- exposing the surface of said body opposite said one surface to infrared radiation, said radiation having an intensity such that said dopant thermally migrates into said body toward said opposite surface and leaves in its path in said semiconductor material a region of recrystallized material uniformly doped to the solid solubility limit of said dopant.
Dependencies are inferred from the claim text.