GA2O3-based single crystal substrate, and production method therefor
AssigneeTamura Corporation
InventorKohei Sasaki
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Abstract
Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
Claims4
A Ga2O3-based single crystal substrate, consisting of:
- impurities of 0.001 mass % including Si and at least one element other than the Si;
- a Ga2O3-based single crystal of 99.999 mass %;
- and
- Fe of a predetermined amount that is not included in amounts of the impurities and the Ga2O3-based single crystal;
- wherein the Fe is higher in concentration than the Si, and
- wherein a concentration of the Fe ranges 5×1017 cm−3 to 1.5×1019 cm−3.
A Ga2O3-based single crystal substrate, consisting of:
- impurities of 0.01 mass % including Si and at least one element other than the Si;
- a Ga2O3-based single crystal of 99.99 mass %;
- and
- Fe of a predetermined amount that is not included in amounts of the impurities and the Ga2O3-based single crystal;
- wherein the Fe is higher in concentration than the Si, and
- wherein a concentration of the Fe ranges 5×1018 cm−3 to 1.5×1019 cm−3.
Dependencies are inferred from the claim text.