C30B 13/12
In the gaseous or vapour state
Official title: in the gaseous or vapour state
C30B13/12 (In the gaseous or vapour state) appears on 5 US grants and 4 published applications in this corpus.
Search patents in C30B- Granted patents
- 5
- Published applications
- 4
- Assignees
- 6
- Inventors
- 19
- Latest grant
- 17 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- Method for manufacturing a FZ silicon single crystal subject to additional gallium doping for solar cells26 Nov 2019US 10,487,417 B2Shin-Etsu Chemical Co., Ltd.
- Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program26 Feb 2013US 8,382,895 B2Sumco Techxiv Corporation
- Monocrystal growing apparatus22 Oct 1991US 5,059,401 AShin-Etsu Handotai Co., Ltd.
- Process for determining the effective doping agent content of hydrogen for the production of semiconductors1 Jul 1980US 4,210,486 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
- Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer22 Jul 2021US 2021/0222319 A1Siltronic AG
- Method for manufacturing fz silicon single crystal for solar cell and solar cell7 Dec 2017US 2017/0350035 A1Shin-Etsu Chemical Co., Ltd.
- Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program17 Dec 2009US 2009/0309069 A1Sumco Techxiv Corporation
Most cited
By later US patents