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US 8,382,895 B2Granted
Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program
AssigneeSumco Techxiv Corporation
InventorsShinji Togawa, Toshiyuki Sato
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Abstract
A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.
Claims5
A method of manufacturing a silicon monocrystal by FZ method, comprising:
- using a P-type or N-type silicon crystal having been pulled up by CZ method as a raw material;
- and
- supplying impurities whose conductivity type is the same as that of the raw material by a gas doping method;
- and recrystallizing the raw material by the FZ method for obtaining a product-monocrystal.
1 more element
Dependencies are inferred from the claim text.