C30B 13/34
Single-crystal growth by zone-melting: characterised by the seed
Official title: characterised by the seed, e.g. by its crystallographic orientation
C30B13/34 (Single-crystal growth by zone-melting: characterised by the seed) appears on 37 US grants and 26 published applications in this corpus.
Search patents in C30B- Granted patents
- 37
- Published applications
- 26
- Assignees
- 28
- Inventors
- 99
- Latest grant
- 15 Aug 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 2 |
| 2006 | 1 | 1 |
| 2007 | 2 | 1 |
| 2008 | 1 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 1 | 1 |
| 2015 | 1 | 1 |
| 2016 | 2 | 2 |
| 2017 | 0 | 1 |
| 2018 | 0 | 1 |
| 2019 | 2 | 5 |
| 2020 | 2 | 1 |
| 2021 | 5 | 1 |
| 2022 | 0 | 1 |
| 2023 | 2 | 1 |
| 2024 | 0 | 1 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
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- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell1 Aug 2023US 11,713,515 B2KYOCERA Corporation
- Transparent complex oxide sintered body, manufacturing method thereof, and magneto-optical device28 Dec 2021US 11,208,733 B2Shin-Etsu Chemical Co., Ltd.
- Melt-growth of single-crystal alloy semiconductor structures and semiconductor assemblies incorporating such structures14 Dec 2021US 11,198,951 B2University of Southampton
- Doped gallium oxide crystalline material and preparation method and application thereof24 Aug 2021US 11,098,416 B2Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences
- Nonlinear optical mg-iv-v 2 crystals, methods of making the same and devices comprising the same28 Aug 2025US 2025/0271727 A1The Penn State Research Foundation
- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell25 Jan 2024US 2024/0026568 A1KYOCERA Corporation
- Method for purifying a thallium compound using a carbon powder14 Sep 2023US 2023/0287596 A1Northwestern University
- Method for purifying an inorganic material using a tube having a bend between a first end and a second end of the tube3 Feb 2022US 2022/0033993 A1Northwestern University
- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell9 Sep 2021US 2021/0277537 A1KYOCERA Corporation
Most cited
By later US patents
- Method of producing single-crystal silicon film39US 4,599,133 AHitachi, Ltd. · 1986
- Method of producing crystalline semiconductor material and method of fabricating semiconductor device36US 7,144,793 B2Sony Corporation · 2006
- Method of producing monocrystal on insulator32US 4,323,417 ATexas Instruments Incorporated · 1982
- Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor23US 4,523,962 AMitsubishi Denki Kabushiki Kaisha · 1985
- Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting20US 4,196,041 AMotorola, Inc. · 1980