Method of producing single-crystal silicon film
AssigneeHitachi, Ltd.
InventorsMasanobu Miyao, Makoto Ohkura, Iwao Takemoto, Masao Tamura
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Abstract
On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.
Claims17
A method of producing a single-crystal silicon film comprising the steps of:
- (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and
- (b) single-crystallizing said polycrystalline or amorphous silicon films by irradiating the plurality of polycrystalline or amorphous silicon films at once with a laser beam or an electron beam;
- the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
A method of producing a single-crystal silicon film comprising the steps of:
- (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and
- (b) single-crystallizing said polycrystalline or amorphous silicon films by heating the plurality of polycrystalline or amorphous silicon films at once with a strip heater;
- the heat generated by the strip heater being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated.
A method of producing a single-crystal silicon film comprising the steps of:
- (a) forming a first insulator film having an opening on one major surface of a single-crystal silicon substrate;
- (b) forming a first polycrystalline or amorphous silicon film on said first insulator film;
- (c) forming a second insulator film having an opening on said first polycrystalline or amorphous silicon film;
- (d) forming a second polycrystalline or amorphous silicon film on said second insulator film;
- and
- (e) irradiating said first and second polycrystalline or amorphous silicon films simultaneously with a laser beam or electron beam;
- the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that said first and second polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
Dependencies are inferred from the claim text.