Method of producing monocrystal on insulator
AssigneeTexas Instruments Incorporated
InventorHon W. Lam
Life of this patent
Estimating the term…
Abstract
A method for producing monocrystal on insulator is disclosed. Initially, an epitaxial layer is created on the single crystal substrate. This epitaxial layer may be formed by direct deposition of the monocrystal layer, or through epitaxial monocrystal growth induced after a polycrystal or amorphous layer has been deposited upon the substrate. By appropriately scanning a laser or other focused energy source beginning at some point within the epitaxial layer, and moving into the polycrystalline or amorphous layer over the insulator region, the polycrystalline or amorphous layer will melt, then upon resolidifying it will be monocrystal in structure due to its monocrystal neighbor, the epitaxial layer.
Claims9
A method for producing monocrystal on insulator comprising the steps of:
- (a) depositing a layer of material on a surface of a single crystal substrate having an insulator region formed therein;
- (b) transforming, via epitaxial growth induced above the single crystal substrate, said layer of material into an epitaxial layer overlying the single crystal substrate and a polycrystal or amorphous layer overlying said insulator region;
- and,
- (c) scanning a focused energy source, from a starting zone within said epitaxial layer to a stopping zone lying inside the polycrystalline or amorphous layer such that the region of polycrystalline or amorphous layer so scanned is melted, whereby on resolidifying, said scan area will resolidify as monocrystal.
Dependencies are inferred from the claim text.