Method for producing semiconductor film
AssigneeRicoh Company, Ltd.
InventorsJunichi Konishi, Kouichi Maari, Toshihiko Taneda, Akiko Kishimoto
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Abstract
A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
Claims19
A method for producing a semiconductor single crystal film comprising the steps of:
- (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer;
- (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate;
- (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein;
- (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein;
- and
- (e) separating said first substrate from said second substrate.
A method for producing a semiconductor single crystal film comprising the steps of:
- (a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer;
- (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate;
- (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein;
- (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion;
- and
- (e) separating said first substrate from said second substrate.
Dependencies are inferred from the claim text.