C30B 13/26
Stirring of the molten zone
C30B13/26 (Stirring of the molten zone) appears on 15 US grants and 10 published applications in this corpus.
Search patents in C30B- Granted patents
- 15
- Published applications
- 10
- Assignees
- 12
- Inventors
- 40
- Latest grant
- 17 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 0 |
| 2003 | 2 | 3 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 2 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 2 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 2 |
| 2022 | 1 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- Systems and methods for continuous-flow laser-induced nucleation16 Aug 2022US 11,414,777 B2New York University
- Method for growing a single crystal by crystallizing the single crystal from a float zone3 Apr 2018US 9,932,691 B2Siltronic AG
- Method for producing a single crystal composed of silicon using molten granules4 Jun 2013US 8,454,746 B2Siltronic AG
- Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer11 Apr 2006US 7,025,827 B2Siltronic AG
- Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer22 Jul 2021US 2021/0222319 A1Siltronic AG
- Systems and methods for continuous-flow laser-induced nucleation28 Jan 2021US 2021/0025075 A1New York University
- Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone23 Jun 2016US 2016/0177469 A1Siltronic AG
- Method for preparing solar grade silicon single crystal using czochralski zone melting method7 Jan 2016US 2016/0002819 A1Tianjin HuanOu Semiconductor Material and Technology Co., Ltd.
- Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules4 Aug 2011US 2011/0185963 A1Siltronic AG
Most cited
By later US patents
- Contactless heater floating zone refining and crystal growth23US 5,217,565 AWisconsin Alumni Research Foundation · 1993
- Apparatus and method for altering the apparent effects of gravity14US 6,596,076 B1Director-General of Agency of Industrial Science and Technology · 2003
- Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear8US 4,615,760 A1986
- Method for producing a silicon single crystal by a float-zone method7US 5,556,461 AShin-Etsu Handotai Co., Ltd. · 1996
- Method of growing silicon monocrystalline rod6US 5,258,092 AShin-Etsu Handotai Co., Ltd. · 1993