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AssigneeTianjin HuanOu Semiconductor Material and Technology Co., Ltd.
InventorsYanjun WANG, Xuenan ZHANG, Haoping SHEN, Liu QIAO, Jia LIU, Zunyi WANG, Zheng LIU, Jian SUN
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The present invention discloses a method of preparing solar-grade silicon single crystals by using the Czochralski and float-zone process: in the equal-diameter growth process during the float-zone phase, under the control by the electric control system of a float-zone single crystal furnace, a downward-rotating motor alternates forward rotations and reverse rotations; said downward-rotating motor drives silicon single crystals to rotate by the preset forward angle or reverse angle. The present invention improves the radial resistivity variation of solar-grade silicon single crystals and solves the black heart problem with solar-grade silicon single crystals. Thus, the conversion efficiency of the solar cells manufactured using such solar-grade silicon single crystals can be increased.
A method of preparing solar-grade silicon single crystals by using the Czochralsk and float-zone process, characterized in that, in the equal-diameter growth process during the float-zone phase, under the control by the electric control system of a float-zone single crystal furnace, a downward-rotating motor alternates forward rotations and reverse rotations;
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