Method for producing a silicon single crystal by a float-zone method
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMasanori Kimura, Hirotoshi Yamagishi
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Abstract
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.
Claims13
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of:
- providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m;
- heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone;
- passing the molten zone through the length of the polysilicon rod, thereby converting the polysilicon rod into a silicon single crystal ingot through a one-pass zoning of the floating zone method;
- and
- post-heating the silicon single crystal being grown.
Dependencies are inferred from the claim text.