Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone
AssigneeSiltronic AG
InventorsGeorg RAMING, Ludwig ALTMANNSHOFER, Gundars RATNIEKS, Martin MOELLER, Frank MUEMMLER
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Abstract
A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.
Claims7
A method for growing a single crystal, comprising crystallizing the single crystal from a float zone, the float zone being inductively heated and the crystallizing single crystal being rotated in a direction of rotation which is reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.
Dependencies are inferred from the claim text.