Method of growing silicon monocrystalline rod
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsHirotoshi Yamagishi, Masanori Kimura, Hideo Arai
Life of this patent
Estimating the term…
Abstract
The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.
Claims6
A method of growing and forming a silicon monocrystalline rod by a floating zone process comprising the steps of melting a portion of a silicon rod by means of an annular induction heating element to form a melting zone;
- regrowing the melted silicon rod in contact with a seed crystal as a single crystal rod in a crystallization zone adjacent said melting zone;
- moving said silicon rod relative to said heating element to move said melting zone and said crystallization zone along said rod, and providing a magnetic field forming means surrounding said silicon rod adjacent said melting zone to apply a magnetic field to said melting zone, wherein said silicon rod has a diameter of from 70 to about 130 mm, said magnetic field has a field strength of from 190 to 600 gauss, and said single crystal rod to be grown is rotated at from 1 to 8 rotations per minute.
A method of growing and forming a silicon monocrystalline rod by a floating zone process comprising the steps of melting a portion of a silicon rod by means of an annular induction heating element to form a melting zone;
- regrowing the melted silicon rod in contact with a seed crystal as a single crystal rod in a crystallization zone adjacent said melting zone;
- moving said silicon rod relative to said heating element to move said melting zone and said crystallization zone along said rod, and providing a magnetic field forming means surrounding said silicon rod adjacent said melting zone to apply a magnetic field to said melting zone, wherein said silicon rod has a diameter of at least about 130 mm, said magnetic field has a field strength of from 185 to 200 gauss, and said single crystal rod to be grown is rotated at from 0.5 to 4 rotations per minute.
Dependencies are inferred from the claim text.