C23C 16/466
Using thermal contact gas
Official title: {using thermal contact gas}
C23C16/466 (Using thermal contact gas) appears on 137 US grants and 157 published applications in this corpus.
Search patents in C23C- Granted patents
- 137
- Published applications
- 157
- Assignees
- 65
- Inventors
- 426
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 7 | 9 |
| 2003 | 4 | 4 |
| 2004 | 3 | 6 |
| 2005 | 4 | 4 |
| 2006 | 1 | 2 |
| 2007 | 1 | 4 |
| 2008 | 0 | 2 |
| 2009 | 1 | 2 |
| 2010 | 1 | 3 |
| 2011 | 3 | 7 |
| 2012 | 0 | 4 |
| 2013 | 0 | 2 |
| 2014 | 6 | 5 |
| 2015 | 4 | 8 |
| 2016 | 5 | 6 |
| 2017 | 2 | 3 |
| 2018 | 5 | 9 |
| 2019 | 4 | 9 |
| 2020 | 4 | 15 |
| 2021 | 4 | 8 |
| 2022 | 8 | 14 |
| 2023 | 12 | 14 |
| 2024 | 9 | 11 |
| 2025 | 10 | 1 |
| 2026 | 7 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing apparatus and substrate processing method2 Jun 2026US 12,644,186 B2Tokyo Electron Limited
- Method of forming interconnect structure31 Mar 2026US 12,590,368 B2APPLIED Materials.Inc.
- Methods for thermal treatment of substrates24 Mar 2026US 12,584,222 B2Aixtron SE
- CVD reactor having means for locally influencing the susceptor temperature17 Mar 2026US 12,577,670 B2Aixtron SE
- Gas supply system, substrate processing apparatus, and operation method for gas supply system17 Feb 2026US 12,553,132 B2Tokyo Electron Limited
- Pedestals and showerheads including channels with decreasing flow velocities20 Aug 2026US 2026/0242950 A1Lam Research Corporation
- Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and recording medium20 Aug 2026US 2026/0242953 A1Kokusai Electric Corporation
- Heat dissipation device6 Aug 2026US 2026/0226625 A1Beijing Naura Microelectronics Equipment Co., Ltd.
- Method of forming interconnect structure18 Jun 2026US 2026/0168096 A1APPLIED Materials.Inc.
- Levitating Magnet Deposition26 Mar 2026US 2026/0085423 A1Dexter Magnetic Technologies, Inc.
Most cited
By later US patents
- Stage having electrostatic chuck and plasma processing apparatus using same921US 5,382,311 ATokyo Electron Limited · 1995
- Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)717US 6,428,859 B1Angstron Systems, Inc. · 2002
- Method and apparatus for improved temperature control in atomic layer deposition499US 6,878,402 B2Novellus Systems, Inc. · 2005
- Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment434US 5,562,947 AMaterials Research Corporation · 1996
- Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)307US 6,416,822 B1Angstrom Systems, Inc. · 2002