Method of forming interconnect structure

A method of forming an interconnect, the method comprising:

• exposing at least a portion of an interconnect surface to a first halide precursor comprising a compound having the general formula (I)
• MQzRm (I),
• wherein M is a metal selected from one or more of titanium (Ti), tantalum (Ta), niobium (Nb), molybdenum (Mo), and tungsten (W), Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from hydrogen, alkyl, CO, cyclopentadienyl, amidinate, diazadiene, or amidate, and m is from 0 to 6;
• exposing at least a portion of the interconnect surface to an organosilane reactant comprising a compound of general formula (II) or general formula (III)
• wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl;
• and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C);
• exposing at least a portion of the interconnect surface to a second halide precursor comprising the compound having the general formula (I), wherein M in each of the first halide precursor and the second halide precursor is independently selected from one or more of titanium (Ti), tantalum (Ta), niobium (Nb), molybdenum (Mo), and tungsten (W), and the first halide precursor is different from the second halide precursor,
• to deposit a liner layer comprising more than one metal M on the interconnect surface, the liner layer substantially free of carbon;
• and
• depositing a gap fill material on the liner layer.