C23C 16/45574
Nozzles for more than one gas
Official title: {Nozzles for more than one gas}
C23C16/45574 (Nozzles for more than one gas) appears on 728 US grants and 1,130 published applications in this corpus.
Search patents in C23C- Granted patents
- 728
- Published applications
- 1,130
- Assignees
- 272
- Inventors
- 2,203
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 4 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 13 | 0 |
| 2001 | 9 | 9 |
| 2002 | 16 | 18 |
| 2003 | 11 | 25 |
| 2004 | 10 | 32 |
| 2005 | 14 | 28 |
| 2006 | 6 | 27 |
| 2007 | 9 | 33 |
| 2008 | 9 | 30 |
| 2009 | 5 | 54 |
| 2010 | 20 | 41 |
| 2011 | 19 | 53 |
| 2012 | 29 | 65 |
| 2013 | 31 | 36 |
| 2014 | 32 | 41 |
| 2015 | 33 | 64 |
| 2016 | 35 | 55 |
| 2017 | 33 | 57 |
| 2018 | 30 | 50 |
| 2019 | 50 | 43 |
| 2020 | 45 | 57 |
| 2021 | 45 | 70 |
| 2022 | 48 | 61 |
| 2023 | 46 | 49 |
| 2024 | 36 | 50 |
| 2025 | 35 | 51 |
| 2026 | 27 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gas inlet element of a CVD reactor with two infeed points6 Oct 2026US 12,753,505 B2Aixtron SE
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Gas injector assembly25 Aug 2026US 12,721,082 B2ASM IP Holding B. V.
- Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing11 Aug 2026US 12,703,911 B2Lam Research Corporation
- Roll-to-roll processing21 Jul 2026US 12,686,920 B2Kalpana Technologies B.V.
- Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus24 Sep 2026US 2026/0286522 A1Kokusai Electric Corporation
- Device for manufacturing a semiconductor device and method for manufacturing a semiconductor device using the same17 Sep 2026US 2026/0275523 A1Samsung Electronics Co., Ltd.
- Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium10 Sep 2026US 2026/0265916 A1Kokusai Electric Corporation
- Parts with embedded channels for semiconductor manufacturing systems10 Sep 2026US 2026/0269188 A1Lam Research Corporation
- Process chamber gas flow improvement13 Aug 2026US 2026/0234797 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Dual gas faceplate for a showerhead in a semiconductor wafer processing system962US 6,086,677 AAPPLIED Materials.Inc. · 2000
- One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system864US 6,302,964 B1APPLIED Materials.Inc. · 2001
- Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween832US 5,781,693 AAPPLIED Materials.Inc. · 1998
- Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions763US 6,161,500 ATokyo Electron Limited · 2000
- Method of delivering gas into reaction chamber and shower head used to deliver gas747US 6,478,872 B1Samsung Electronics Co., Ltd. · 2002