One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system

A chemical vapor deposition reactor comprising:

• a vacuum chamber defining a deposition region;
• a wafer support pedestal, positioned within said vacuum chamber and proximate said deposition region;
• a showerhead, positioned within said vacuum chamber and proximate said deposition region, where said showerhead comprises a one-piece gas distribution faceplate including a first surface, a second surface, and a third surface, the one-piece gas distribution faceplate comprising a plurality of first gas holes extending through the one-piece gas distribution faceplate between the first surface and the second surface, the one-piece gas distribution faceplate having an internal gas distribution cavity defined by a plurality of interconnecting channels, a plurality of second gas holes extending through the one-piece gas distribution faceplate between the first surface into the plurality of interconnecting channels, the interconnecting channels are coupled to a plenum that is in turn fluidly coupled to at least one gas conduit, the gas conduit extends to the third surface;
• and
• a gas distribution manifold assembly, coupled to said one-piece gas distribution faceplate, for supplying a first gas to the first gas holes in said one-piece gas distribution faceplate and a second gas to the second gas holes in said one-piece gas distribution faceplate.