C23C 16/272
Using dc, ac or rf discharges
Official title: {using DC, AC or RF discharges}
C23C16/272 (Using dc, ac or rf discharges) appears on 94 US grants and 75 published applications in this corpus.
Search patents in C23C- Granted patents
- 94
- Published applications
- 75
- Assignees
- 85
- Inventors
- 257
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 2 | 2 |
| 2004 | 0 | 3 |
| 2005 | 3 | 0 |
| 2006 | 1 | 2 |
| 2007 | 1 | 3 |
| 2008 | 0 | 9 |
| 2009 | 0 | 1 |
| 2010 | 6 | 2 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 1 |
| 2014 | 1 | 3 |
| 2015 | 2 | 3 |
| 2016 | 3 | 3 |
| 2017 | 2 | 2 |
| 2018 | 3 | 6 |
| 2019 | 1 | 1 |
| 2020 | 3 | 5 |
| 2021 | 2 | 7 |
| 2022 | 2 | 4 |
| 2023 | 5 | 4 |
| 2024 | 2 | 4 |
| 2025 | 4 | 7 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- High density carbon films for patterning applications4 Nov 2025US 12,463,036 B2APPLIED Materials.Inc.
- Implantable all diamond microelectrode and fabrication method25 Feb 2025US 12,237,212 B2Board of Trustees of Michigan State University
- Structure for producing diamond and method for manufacturing same18 Feb 2025US 12,227,828 B2Disco Corporation
- Method for producing diamond thin film and apparatus for producing diamond thin film17 Sep 2026US 2026/0275505 A1Nissin Electric Co., Ltd.
- Lower k and higher hardness with improved plasma induced damage (pid) dielectric film deposition4 Dec 2025US 2025/0369102 A1APPLIED Materials.Inc.
- Apparatus and method of forming carbon-containing film on substrate30 Oct 2025US 2025/0336650 A1Tokyo Electron Limited
- Coatings on inner surfaces of particle containment chambers19 Jun 2025US 2025/0201529 A1Helion Energy, Inc.
- Substrate for high-frequency device, and method for producing same15 May 2025US 2025/0154646 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means118US 5,071,670 A1991
- Method for synthesizing diamond by using plasma99US 4,767,608 ANational Institute for Research in Inorganic Materials · 1988
- Method for preparation of edged medical tool60US 4,980,021 AShin-Etsu Chemical Co., Ltd. · 1990
- Belt retractor with switchable force limiter54US 6,616,081 B1Autoliv Development AB · 2003
- Arc assisted CVD coating and sintering method53US 5,587,207 A1996