Structure for producing diamond and method for manufacturing same
AssigneesNational University Corporation Nagaoka University of Technology, Atsuhito Sawabe, Yutaka Kimura, Waseda University, Disco Corporation
InventorsHideo Aida, Atsuhito Sawabe, Yutaka Kimura, Jun Mizuno, Ryuji Oshima
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Abstract
Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.
Claims8
A structure for producing a diamond composed of a base substrate and an Ir thin film formed on the base substrate,
- wherein the thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond;
- wherein the melting point of the base substrate is 700° C. or higher;
- wherein the Ir thin film is a thin film formed on a dummy substrate that is different from the base substrate, and the Ir thin film is formed on the base substrate by bonding the Ir thin film to the base substrate;
- wherein all peak angles in an X-ray diffraction pattern of the Ir thin film shift randomly from all peak angles in an X-ray diffraction pattern of the base substrate;
- and
- there is no relationship between a crystal orientation of the Ir thin film and a crystal orientation of the base substrate.
Dependencies are inferred from the claim text.