Method for producing diamond thin film and apparatus for producing diamond thin film
AssigneeNissin Electric Co., Ltd.
InventorsRyota ANDO, Satoru NAGAMACHI, Natsuo TATSUMI
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AssigneeNissin Electric Co., Ltd.
InventorsRyota ANDO, Satoru NAGAMACHI, Natsuo TATSUMI
Estimating the term…
Provided is a method for producing a diamond thin film, which includes supplying a raw material gas containing C, H, and O into a vacuum vessel in which a base material is disposed, generating inductively coupled plasma in the vacuum vessel by flowing high-frequency current through an antenna disposed inside or outside the vacuum vessel, the antenna including a conductor element and a capacitive element electrically connected to each other in series, and synthesizing a diamond thin film on the base material by a plasma CVD method using a generated inductively coupled plasma. Plasma characteristics when synthesizing the diamond thin film include: an electron temperature of 1.0 eV or more and 2.0 eV or less, an electron density of 1.0×1011 cm−3 or more and 1.0×1012cm−3 or less, and an ion saturation current of 1.0×10−4 A or more and 1.0×10−2 A or less.
A method for producing a diamond thin film, the method for producing the diamond thin film comprising:
An apparatus for producing a diamond thin film, which is an apparatus for producing a diamond thin film for synthesizing a diamond thin film on a base material by a plasma CVD method using inductively coupled plasma, comprising:
Dependencies are inferred from the claim text.