Substrate for high-frequency device, and method for producing same
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsToshiki MATSUBARA, Katsuyoshi SUZUKI, Yuki TANAKA, Atsushi SUZUKI, Tatsuo ABE, Tsuyoshi OHTSUKI
Life of this patent
Estimating the term…
Abstract
A substrate for a high-frequency device including a support substrate having unevenness on a surface thereof, a diamond layer on the surface of the support substrate, and a silicon oxide film layer on the diamond layer. Thereby, the substrate for a high-frequency device using diamond having excellent high-frequency characteristics and a method for producing a substrate for a high-frequency device using diamond having excellent high-frequency characteristics are provided.
Claims9
1-6. (canceled)
A substrate for a high-frequency device comprising:
- a support substrate having unevenness on a surface thereof;
- a diamond layer on the surface of the support substrate;
- and
- a silicon oxide film layer on the diamond layer.
A method for producing a substrate for a high-frequency device, the method comprising the steps of:
- providing a support substrate;
- forming unevenness on a surface of the support substrate;
- forming a diamond layer on the surface of the support substrate;
- and
- forming a silicon oxide film layer on the diamond layer.
Dependencies are inferred from the claim text.