B81C 2201/0173
Thermo-migration of impurities from a solid
Official title: Thermo-migration of impurities from a solid, e.g. from a doped deposited layer
B81C2201/0173 (Thermo-migration of impurities from a solid) appears on 14 US grants and 15 published applications in this corpus.
Search patents in B81C- Granted patents
- 14
- Published applications
- 15
- Assignees
- 12
- Inventors
- 37
- Latest grant
- 17 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 2 |
| 2018 | 1 | 2 |
| 2019 | 1 | 0 |
| 2020 | 3 | 2 |
| 2021 | 0 | 3 |
| 2022 | 3 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 2 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Laterally-doped MEMS resonator with piezoelectric layer17 Feb 2026US 12,556,157 B1SiTime Corporation
- Method of making ohmic contact on low doped bulk silicon for optical alignment20 Dec 2022US 11,530,130 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of making ohmic contact on low doped bulk silicon for optical alignment1 Nov 2022US 11,485,631 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing a nanocrystalline, gas-sensitive layer structure16 Aug 2022US 11,414,319 B2Robert Bosch GmbH
- Capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods1 Dec 2020US 10,850,306 B2Butterfly Network, Inc.
- Laterally-doped mems resonator with piezoelectric layer21 Aug 2025US 2025/0266801 A1
- Protective coating for copper surface in sensor6 Feb 2025US 2025/0042723 A1
- Method for producing a nanocrystalline, gas-sensitive layer structure25 Nov 2021US 2021/0363004 A1Robert Bosch GmbH
- Method of making ohmic contact on low doped bulk silicon for optical alignment11 Mar 2021US 2021/0070611 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of making ohmic contact on low doped bulk silicon for optical alignment11 Mar 2021US 2021/0070612 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Micro-electro-mechanical device having two buried cavities and manufacturing process thereof12US 9,688,531 B2STMicroelectronics S,r.l. · 2017
- Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display11US 7,116,462 B2Sony Corporation · 2006
- Capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods5US 10,850,306 B2Butterfly Network, Inc. · 2020
- Process for producing spatially patterned components5US 5,902,120 AMicronas Intermetall GmbH · 1999
- Micro-electro-mechanical device and manufacturing process thereof1US 10,626,008 B2STMicroelectronics S,r.l. · 2020