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US 10,626,008 B2Granted
Micro-electro-mechanical device and manufacturing process thereof
AssigneeSTMicroelectronics S.r.l.
InventorsLorenzo Baldo, Enri Duqi, Flavio Francesco Villa
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Abstract
A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
Claims20
A method, comprising:
- forming a first buried cavity in a monolithic body of semiconductor material;
- and
- forming a sensitive region in the monolithic body facing the first buried cavity, wherein forming the sensitive region includes forming a single trench that extends into the monolithic body as far as the first buried cavity, the single trench extending around the sensitive regions so that a first end of the single trench overlaps a second end of the single trench.
A method, comprising:
- forming a buried cavity in a monolithic body of semiconductor material;
- forming a sensitive region in the monolithic body of semiconductor material covering the buried cavity;
- and
- forming a movable element including a central portion and a perimeter portion, the perimeter portion coupled to the sensitive region, the central portion of the movable element being separated from the sensitive region by a second cavity.
1 more element
A method, comprising:
- forming a first buried cavity in a monolithic body of semiconductor material;
- and
- decoupling a sensitive region in the monolithic body from a peripheral portion of the monolithic body by forming a single spiral shaped trench that extends around an entire perimeter of the sensitive region, the sensitive region facing the first buried cavity.
Dependencies are inferred from the claim text.