Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display

A manufacturing method of an electrostatic drive type MEMS device, characterized by comprising the processes of:

• forming a substrate side electrode that is insulated to be isolated from other parts by doping impurities onto the surface of a semiconductor substrate, selectively forming a sacrificial layer including the upper part of said substrate side electrode, forming a beam having a reflective film cum driving side electrode on said sacrificial layer, and removing said sacrificial layer.

An optical MEMS device, characterized by comprising a substrate side electrode and a beam that is disposed to oppose said substrate side electrode and that has a light reflective film cum driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and said driving side electrode, said substrate side electrode being formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

A light modulation device, characterized by comprising a substrate side electrode and a beam that is disposed to oppose said substrate side electrode and that has a light reflective film cum driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and said driving side electrode, said substrate side electrode being formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

A GLV device, characterized by comprising a common substrate side electrode and a plurality of beams that are independently disposed in parallel to each other to oppose said common substrate side electrode and that each have a light reflective film cum driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and said driving side electrode, said substrate side electrode being formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

A laser display comprising a laser beam source and a GLV device that is disposed on an optical axis of the laser beam emitted from said laser beam source to modulate the strength of the laser beam, characterized in that said GLV device includes a common substrate side electrode and a plurality of beams that are independently disposed in parallel to each other to oppose said common substrate side electrode and that each have a light reflective film cum driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and said driving side electrode, said substrate side electrode being formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.