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US 11,414,319 B2Granted
Method for producing a nanocrystalline, gas-sensitive layer structure
AssigneeRobert Bosch GmbH
InventorsAndreas Krauss, Elisabeth Preiss
Life of this patent
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Abstract
A method for producing a nanocrystalline, gas-sensitive layer structure. The method for producing a nanocrystalline, gas-sensitive layer structure on a substrate comprises the steps: depositing a base layer made of a base material; depositing a doping layer made of a doping material; repeating the preceding steps; and performing a tempering step, whereby a gas-sensitive, nanocrystalline layer structure is produced.
Claims11
A method for producing a nanocrystalline, gas-sensitive layer structure on a substrate, the method comprising the following steps:
- a) depositing a base layer made of a base material;
- b) depositing a doping layer made of a doping material;
- c) repeating the steps a) and/or b);
- and
- d) performing a tempering step in an oxygen-containing gas mixture including 1 vol. % to 30 vol. % O2 and a component of moisture of absolute 1 vol. % to 15 vol. %, whereby the doping material is selected such that the doping material is diffused into the base material, subsequently disperses in the base material almost completely, provides limits for recrystallization of the base material, and the nanocrystalline, gas-sensitive layer structure is produced from a plurality of stacked, nanocrystalline layers comprising the base material and the diffused doping material, each of the nanocrystalline layers having areas of different crystal orientation being formed which are separated from one another respectively by a grain boundary within the respective nanocrystalline layer.
2 more elements
Dependencies are inferred from the claim text.