B81C 2201/0138
Monitoring physical parameters in the etching chamber
Official title: Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition
B81C2201/0138 (Monitoring physical parameters in the etching chamber) appears on 36 US grants and 35 published applications in this corpus.
Search patents in B81C- Granted patents
- 36
- Published applications
- 35
- Assignees
- 30
- Inventors
- 90
- Latest grant
- 11 Mar 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
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| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 2 |
| 2002 | 2 | 2 |
| 2003 | 1 | 1 |
| 2004 | 0 | 1 |
| 2005 | 2 | 3 |
| 2006 | 1 | 1 |
| 2007 | 1 | 2 |
| 2008 | 0 | 3 |
| 2009 | 2 | 2 |
| 2010 | 4 | 2 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 2 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 2 |
| 2017 | 2 | 2 |
| 2018 | 3 | 4 |
| 2019 | 1 | 0 |
| 2020 | 3 | 1 |
| 2021 | 2 | 3 |
| 2022 | 1 | 0 |
| 2023 | 2 | 2 |
| 2024 | 1 | 0 |
| 2025 | 2 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods and systems for transmission and detection of free radicals11 Mar 2025US 12,247,920 B2Wisconsin Alumni Research Foundation
- Method for manufacturing semiconductor substrate, method for manufacturing damascene wiring structure, semiconductor substrate, and damascene wiring structure7 Jan 2025US 12,187,607 B2Hamamatsu Photonics K.K.
- Cryogenic atomic layer etch with noble gases28 May 2024US 11,996,294 B2APPLIED Materials.Inc.
- Methods and systems for transmission and detection of free radicals28 Feb 2023US 11,592,394 B2Wisconsin Alumni Research Foundation
- Enhanced microfabrication using electrochemical techniques10 Jan 2023US 11,549,903 B1National Technology & Engineering Solutions of Sandia, LLC
- Method of manufacturing a microstructure6 Aug 2026US 2026/0225877 A1
- Methods and systems for transmission and detection of free radicals23 Nov 2023US 2023/0375474 A1Wisconsin Alumni Research Foundation
- Cryogenic atomic layer etch with noble gases9 Mar 2023US 2023/0071505 A1APPLIED Materials.Inc.
- Method for manufacturing semiconductor substrate, method for manufacturing damascene wiring structure, semiconductor substrate, and damascene wiring structure30 Dec 2021US 2021/0403320 A1Hamamatsu Photonics K.K.
- Cryogenic atomic layer etch with noble gases23 Dec 2021US 2021/0398815 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method and apparatus for monitoring processes using multiple parameters of a semiconductor wafer processing system122US 5,910,011 AAPPLIED Materials.Inc. · 1999
- Method of etching a sacrificial silicon oxide layer62US 8,679,354 B2Memsstar Limited · 2014
- Method for vapor phase etching of silicon50US 7,041,224 B2Reflectivity, INC · 2006
- Methods of making a MEMS device by monitoring a process parameter44US 7,569,488 B2QUALCOMM MEMS Technologies, Inc. · 2009
- Microelectromechanical device manufacturing process38US 6,337,027 B12002